共 50 条
- [7] A comparison between NO-annealed O2- and N2O-grown gate dielectrics 1998 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, 1998, : 36 - 39
- [8] Impact of implantation on the properties of N2O-nitrided oxides of p+- and n+-gate MOS devices NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2009, 267 (8-9): : 1564 - 1567