INVESTIGATION OF THE EFFECT OF NONLINEAR PHYSICAL PHENOMENA ON CHARGE CARRIER TRANSPORT IN SEMICONDUCTOR DEVICES.

被引：0

作者：

Mnatsakanov, T.T. ^{[1
]}

Rostovtsev, I.L. ^{[1
]}

Philatov, N.I. ^{[1
]}

机构：

[1] V. I. Lenin All Union, Electrotechnical Inst, Moscow, USSR, V. I. Lenin All Union Electrotechnical Inst, Moscow, USSR

来源：

| 1600年 / 30期

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摘要：

SEMICONDUCTOR MATERIALS

引用

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[1] INVESTIGATION OF THE EFFECT OF NONLINEAR PHYSICAL PHENOMENA ON CHARGE CARRIER TRANSPORT IN SEMICONDUCTOR-DEVICES
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