Reduction and non-uniformity of high density plasma process induced electrical degradation in MOS devices

被引：0
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作者：
Tzeng, Pei-Jer [1 ]
Li, Jen-Chieh [1 ]
Yeh, Chun-Chen [1 ]
Chang-Liao, Kuei-Shu [1 ]
机构：
[1] Natl Tsing Hua Univ, Hsinchu, Taiwan
来源：
International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings | 1999年
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页码：100 / 103
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