Role of deep-level trapping on the surface photovoltage of semi-insulating GaAs

被引：0
|
作者：
Liu, Q.
Ruda, H. E.
机构：
来源：
Physical Review B: Condensed Matter | 1997年 / 55卷 / 16期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Noncontact Deep Level Photo-Thermal Spectroscopy of semi-insulating GaAs
    J. Xia
    A. Mandelis
    [J]. The European Physical Journal Special Topics, 2008, 153 : 283 - 285
  • [32] Noncontact Deep Level Photo-Thermal Spectroscopy of semi-insulating GaAs
    Xia, J.
    Mandelis, A.
    [J]. EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS, 2008, 153 (1): : 283 - 285
  • [33] Complete set of deep traps in semi-insulating GaAs
    Pavlovic, M
    Desnica, UV
    Gladic, J
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 88 (08) : 4563 - 4570
  • [34] Complete set of deep traps in semi-insulating GaAs
    [J]. 1600, American Institute of Physics Inc. (88):
  • [35] Field-enhanced trapping in deep levels by multiple phonon emission in semi-insulating GaAs
    Rubinger, RM
    de Oliveira, AG
    Ribeiro, GM
    Bezerra, JC
    Moreira, MVB
    Chacham, H
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 88 (11) : 6541 - 6544
  • [36] Optical deep-level transient characterisation of gamma-irradiated semi-insulating gallium arsenide
    Lai, ST
    Alexiev, D
    Schwab, C
    Donnelly, I
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1997, 395 (01): : 76 - 80
  • [37] Effect of Deep-Level Defects on Transient Photoconductivity of Semi-Insulating 4H-SiC
    Suproniuk, M.
    Kaminski, P.
    Kozlowski, R.
    Pawlowski, M.
    [J]. ACTA PHYSICA POLONICA A, 2014, 125 (04) : 1042 - 1048
  • [38] Optical deep-level transient characterization of gamma-irradiated semi-insulating gallium arsenide
    Lai, Say Teng
    Alexiev, Dimitri
    Schwab, Claude
    Donnelly, Ian
    [J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1997, 395 (01): : 76 - 80
  • [39] THE ROLE OF THE EC-0.34 EV DONOR LEVEL IN SEMI-INSULATING GAAS
    PARSEY, JM
    WADA, K
    KAMINSKA, M
    LAGOWSKI, J
    GATOS, HC
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : C107 - C107
  • [40] Orientation dependence of surface passivation for semi-insulating GaAs
    Koutzarov, IP
    Edirisinghe, CH
    Ruda, HE
    Jedral, LZ
    Liu, Q
    GuoPing, J
    Xia, H
    Lennard, WN
    RodriguezFernandez, L
    [J]. COMPOUND SEMICONDUCTOR ELECTRONICS AND PHOTONICS, 1996, 421 : 93 - 98
12345