共 50 条
- [41] Numerical analysis of p-GaAs/n-GaAs tunnel junction employing InAs intermediate layer for high concentrated photovoltaic applications 2ND INTERNATIONAL CONFERENCE ON MATHEMATICAL MODELING IN PHYSICAL SCIENCES 2013 (IC-MSQUARE 2013), 2014, 490
- [42] A FLUX ANALYSIS OF MULTIPLE JUNCTION SOLAR-CELLS - THE GENERAL EQUATIONS, WITH COMPUTATIONS FOR AN N-CDS/N-GAAS PHOTOANODE SOLAR CELLS, 1986, 17 (2-3): : 317 - 342
- [44] ACCUMULATION LAYER FORMATION AT N-GAAS ELECTROLYTE INTERFACE - PHOTOLUMINESCENCE PROBE OF THE KINETIC BARRIER FOR HYDROGEN EVOLUTION REACTION JOURNAL OF PHYSICAL CHEMISTRY, 1986, 90 (25): : 6654 - 6657
- [45] INFLUENCE OF THE SURFACE PRETREATMENT ON THE PHOTOCURRENT-VOLTAGE CHARACTERISTICS AND THE SPECTRAL RESPONSE OF THE N-GAAS-ELECTROLYTE INTERFACE BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1979, 83 (03): : 236 - 241
- [46] STUDY OF A LIQUID JUNCTION SOLAR-CELL N-GAAS (SE2-/SE-N(2-)) PT REVUE DE PHYSIQUE APPLIQUEE, 1982, 17 (12): : 801 - 806
- [48] Photoelectrochemical Processes at n-GaAs(100)/Aqueous HCl Electrolyte Interface: A Synchrotron Photoemission Spectroscopy Study of Emersed Electrodes JOURNAL OF PHYSICAL CHEMISTRY C, 2014, 118 (24): : 12774 - 12781
- [50] New porosification of n-InP and n-GaAs in acidic liquid ammonia at 223 K:: unusual morphologies associated to distinguished electrochemical behaviours PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (05): : 1286 - 1291