Influence of composition on the piezoelectric effect and on the conduction band energy levels of inxGa1-xAs/GaAs quantum dots

被引:0
|
作者
机构
[1] Migliorato, M.A.
[2] Powell, D.
[3] Liew, S.L.
[4] Cullis, A.G.
[5] Navaretti, P.
[6] Steer, M.J.
[7] Hopkinson, M.
[8] Fearn, M.
[9] Jefferson, J.H.
来源
Migliorato, M.A. | 1600年 / American Institute of Physics Inc.卷 / 96期
关键词
The authors acknowledge the financial support of MOD;
D O I
暂无
中图分类号
学科分类号
摘要
34
引用
收藏
相关论文
共 50 条
  • [41] Composition and strain dependence of the piezoelectric coefficients in InxGa1-xAs alloys
    Migliorato, M. A.
    Powell, D.
    Cullis, A. G.
    Hammerschmidt, T.
    Srivastava, G. P.
    PHYSICAL REVIEW B, 2006, 74 (24):
  • [42] Optical pumping in strained InxGa1-xAs/GaAs quantum wells
    Hassen, F
    Sghaier, H
    Maaref, H
    Murray, R
    THIN SOLID FILMS, 1998, 336 (1-2) : 370 - 372
  • [43] Magnetic properties of GaAs/δ⟨Mn⟩/GaAs/InxGa1-xAs/GaAs quantum wells
    Aronzon, B. A.
    Lagutin, A. S.
    Ryl'kov, V. V.
    Tugushev, V. V.
    Men'shov, V. N.
    Lashkul, A. V.
    Laiho, R.
    Vikhrova, O. V.
    Danilov, Yu. A.
    Zvonkov, B. N.
    JETP LETTERS, 2008, 87 (03) : 164 - 169
  • [44] The effect of In segregation on the PLE spectra of InxGa1-xAs/GaAs multiple quantum wells
    Worren, T
    Fimland, BO
    Hunderi, O
    PHYSICA SCRIPTA, 1999, T79 : 111 - 115
  • [45] Few-particle energies versus geometry and composition of InxGa1-xAs/GaAs self-organized quantum dots
    Schliwa, Andrei
    Winkelnkemper, Momme
    Bimberg, Dieter
    PHYSICAL REVIEW B, 2009, 79 (07)
  • [46] FIELD-EFFECT ON THE DEEP LEVELS AND DX CENTERS IN ALXGA1-XAS/GAAS AND INXGA1-XAS/GAAS
    HALDER, NC
    ECHON, EA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (05): : 2323 - 2330
  • [47] Hydrogenation of strain engineered InAs/InxGa1-xAs quantum dots
    Ochoa, D
    Polimeni, A
    Capizzi, M
    Frova, A
    Seravalli, L
    Minelli, M
    Frigeri, P
    Franchi, S
    8TH CONFERENCE ON OPTICS OF EXCITONS IN CONFINED SYSTEMS (OECS-8), 2004, : 581 - 584
  • [48] Energy Level Engineering in InxGa1-xAs/GaAs Quantum Dots Applicable to Quantum Dot-Lasers by Changing the Stoichiometric Percentage
    Borji, Mandi Ahmadi
    Rajaei, Esfandiar
    JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2016, 11 (03) : 315 - 322
  • [49] Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots
    Lim, JG
    Park, YJ
    Park, YM
    Song, JD
    Choi, WJ
    Han, IK
    Cho, WJ
    Lee, JI
    Kim, TW
    Kim, HS
    Park, CG
    JOURNAL OF CRYSTAL GROWTH, 2005, 275 (3-4) : 415 - 421
  • [50] Characterization of InAs quantum dots in strained InxGa1-xAs quantum wells
    Stintz, A
    Liu, GT
    Gray, AL
    Spillers, R
    Delgado, SM
    Malloy, KJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03): : 1496 - 1501