NONLINEAR ACOUSTOELECTRIC EFFECTS AT HIGH SURFACE-WAVE INTENSITIES IN LAYERED PIEZOELECTRIC plus SEMICONDUCTOR STRUCTURES.

被引：0
|
作者：
Slavutskii, L.A. [1 ]
Solodov, I.Yu. [1 ]
Timofeeva, G.Yu. [1 ]
机构：
[1] M. V. Lomonosov Moscow State Univ, USSR, M. V. Lomonosov Moscow State Univ, USSR
来源：
Soviet microelectronics | 1986年 / 15卷 / 04期
关键词：
ACOUSTIC SURFACE WAVE DEVICES - MICROELECTRONICS - SEMICONDUCTOR DEVICES - SIGNAL PROCESSING;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The paper is dedicated to the investigation of the distinctive features of surface acoustic waves harmonic generation and asynchronous interactions, in particular, the convolution of oppositely traveling surface acoustic waves and acoustoelectric memory under the conditions of high wave intensities. Particular attention is given to the influence of the variable surface potential of the semiconductor on the indicated nonlinear effects.
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页码：206 / 211
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