Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation

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作者：
机构：
[1] Ursaki, V.V.
[2] Tiginyanu, I.M.
[3] Ricci, P.C.
[4] Anedda, A.
[5] Hubbard, S.
[6] Pavlidis, D.
来源：
Ricci, P.C. (carlo.ricci@dsf.unica.it) | 1600年 / American Institute of Physics Inc.卷 / 94期
关键词：
Hole traps - Luminescence - Photoconductivity - Photocurrents - Quenching;
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摘要：
The persistent photoconductivity (PPC) and optical quenching (OQ) of photocurrents in GaN layers were observed under dual excitation. The relation between PPC and OQ of photoconductivity were studied by the exciting the samples with two beams of monochromatic radiation of various wavelenghts. The possible nature of the defects responsible for optical metastability of GaN were also discussed.
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