Effect of hydrogen radicals on the reduction of carbon incorporation into GaAs grown by using trimethylgallium

被引：0
|
作者：
机构：
[1] Goto, Shigeo
[2] Nomura, Yasuhiko
[3] Morishita, Yoshitaka
[4] Katayama, Yoshifumi
[5] Ohno, Hideo
来源：
Goto, Shigeo | 1600年 / JJAP, Minato-ku, Japan卷 / 33期
关键词：
Semiconducting gallium arsenide;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] ATOMIC-FORCE MICROSCOPY STUDY OF SURFACE-MORPHOLOGY OF GAAS GROWN BY ATOMIC LAYER EPITAXY USING TRIMETHYLGALLIUM AND ARSINE
    PARK, SJ
    HA, JS
    RO, JR
    SIM, JK
    LEE, EH
    JEON, C
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (03): : 1623 - 1626
  • [42] Mechanism of carbon incorporation into GaAs studied using isotopically labeled trimethylarsine
    Watanabe, N
    Ito, H
    Ishibashi, T
    JOURNAL OF CRYSTAL GROWTH, 1997, 171 (1-2) : 21 - 26
  • [43] CARBON AND HYDROGEN INCORPORATION IN ZNTE LAYERS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    DUMONT, H
    SVOB, L
    BALLUTAUD, D
    GOROCHOV, O
    JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (02) : 239 - 242
  • [44] EFFECTS OF SUBSTRATE MISORIENTATION AND GROWTH TEMPERATURE ON IMPURITY INCORPORATION IN HYDROGEN REDUCTION CHLORIDE VPE OF GAAS
    HASEGAWA, F
    YAMAMOTO, T
    ARIMA, E
    NANNICHI, Y
    JOURNAL OF CRYSTAL GROWTH, 1988, 89 (04) : 511 - 518
  • [45] Reduction of Tertiary Carbon Radicals via Asymmetric Hydrogen Atom Transfer (AHAT)
    Han, Xue
    He, Chuan
    CHINESE JOURNAL OF CHEMISTRY, 2024, 42 (24) : 3414 - 3428
  • [46] Carbon reduction and antimony incorporation in InGaAsSb films grown by metalorganic molecular beam epitaxy using tris-dimethylaminoantimony
    Mitsuhara, Manabu
    Sato, Tomonari
    Yamamoto, Norio
    Fukano, Hideki
    Kondo, Yasuhiro
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (14) : 3636 - 3639
  • [47] Effect of incorporation of copper or nickel on hydrogen storage in ceria - Mechanism of reduction
    Wrobel, G
    Lamonier, C
    Bennani, A
    DHuysser, A
    Aboukais, A
    JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS, 1996, 92 (11): : 2001 - 2009
  • [48] CARBON INCORPORATION IN GAAS AND ALXGA1-XAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    GIANNINI, C
    GERARDI, C
    TAPFER, L
    FISCHER, A
    PLOOG, KH
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (01) : 77 - 81
  • [49] ALIGNED DEFECT COMPLEX CONTAINING CARBON AND HYDROGEN IN AS-GROWN GAAS EPITAXIAL LAYERS
    CHENG, Y
    STAVOLA, M
    ABERNATHY, CR
    PEARTON, SJ
    HOBSON, WS
    PHYSICAL REVIEW B, 1994, 49 (04): : 2469 - 2476
  • [50] CARBON ACCEPTOR INCORPORATION IN GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION - ARSINE VERSUS TERTIARYBUTYLARSINE
    WATKINS, SP
    HAACKE, G
    APPLIED PHYSICS LETTERS, 1991, 59 (18) : 2263 - 2265
12345