Effect of hydrogen radicals on the reduction of carbon incorporation into GaAs grown by using trimethylgallium

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[1] Goto, Shigeo
[2] Nomura, Yasuhiko
[3] Morishita, Yoshitaka
[4] Katayama, Yoshifumi
[5] Ohno, Hideo
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Goto, Shigeo | 1600年 / JJAP, Minato-ku, Japan卷 / 33期
关键词：
Semiconducting gallium arsenide;
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