Deep-level transient spectroscopy characterization of In0.48Ga0.52P grown at different V/III ratio using a valved phosphorus cracker cell in solid source molecular beam epitaxy

被引：0
|
作者：
Yoon, S.F. [1 ]
Lui, P.Y. [1 ]
Zheng, H.Q. [1 ]
机构：
[1] Sch. Elec. Electron. Eng. (Block S2), Nanyang Technol. Univ., Nanyang A., Singapore, Singapore
来源：
Journal of Crystal Growth | 1999年 / 203卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：31 / 39
相关论文
共 27 条
  • [21] Deep level effects on the characteristics of Al0.24Ga0.76As/In0.20Ga0.80As/GaAs and In0.48Ga0.52P/In0.20Ga0.80As/GaAs high electron mobility transistors grown by solid source molecular beam epitaxy
    Yoon, SF
    Yip, KH
    Zheng, HQ
    Gay, BP
    SOLID-STATE ELECTRONICS, 2000, 44 (11) : 1909 - 1916
  • [22] Characterization of solid source MBE-grown In0.48Ga0.52P/In0.2Ga0.8As/GaAs structures using X-ray reflectivity technique
    Yoon, SF
    Lui, PY
    Zheng, HQ
    JOURNAL OF CRYSTAL GROWTH, 1999, 197 (1-2) : 59 - 66
  • [23] DEEP-LEVEL TRANSIENT SPECTROSCOPY CHARACTERIZATION OF ELECTRON-IRRADIATION-INDUCED HOLE TRAPS IN P-GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    AURET, FD
    GOODMAN, SA
    MEYER, WE
    ERASMUS, RM
    MYBURG, G
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (7B): : L974 - L977
  • [24] DEEP-LEVEL TRANSIENT SPECTROSCOPY AND ADMITTANCE SPECTROSCOPY OF SI1-XGEX/SI GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
    LI, SH
    SMITH, SR
    BHATTACHARYA, PK
    CHUNG, SW
    MITCHEL, WC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 892 - 894
  • [25] EVALUATION OF THE PERFORMANCE AND OPERATING CHARACTERISTICS OF A SOLID PHOSPHORUS SOURCE VALVED CRACKING CELL FOR MOLECULAR-BEAM EPITAXY GROWTH OF III-V COMPOUNDS
    BAILLARGEON, JN
    CHO, AY
    FISCHER, RJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (01): : 64 - 68
  • [26] Characterization of majority and minority carrier deep levels in p -type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy
    Armstrong, A.
    Caudill, J.
    Corrion, A.
    Poblenz, C.
    Mishra, U.K.
    Speck, J.S.
    Ringel, S.A.
    Journal of Applied Physics, 2008, 103 (06):
  • [27] Characterization of majority and minority carrier deep levels in p-type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy
    Armstrong, A.
    Caudill, J.
    Corrion, A.
    Poblenz, C.
    Mishra, U. K.
    Speck, J. S.
    Ringel, S. A.
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (06)
123