Deep-level transient spectroscopy characterization of In0.48Ga0.52P grown at different V/III ratio using a valved phosphorus cracker cell in solid source molecular beam epitaxy

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作者：
Yoon, S.F. [1 ]
Lui, P.Y. [1 ]
Zheng, H.Q. [1 ]
机构：
[1] Sch. Elec. Electron. Eng. (Block S2), Nanyang Technol. Univ., Nanyang A., Singapore, Singapore
来源：
Journal of Crystal Growth | 1999年 / 203卷 / 01期
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页码：31 / 39
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