DETERMINATION OF HOLE AND ELECTRON TRAPS FROM CAPACITANCE MEASUREMENTS.

A method to evaluate energy levels and densities of electron and hole traps in semiconductors from capacitance measurements on Schottky barriers and pn junction is presented. The occupation function for electrons at the deep level is derived, using Schockley-Read statistics for both forward and reverse biased junctions. The experimental procedure to determine energy levels and the density of the traps is presented along with experimental results on silicon and gallium arsenide Schottky barriers and p** plus n junctions demonstrating the validity and limitations of the method.