Compact laser molecular beam epitaxy system using laser heating of substrate for oxide film growth

被引：0
|
作者：
机构：
来源：
Rev Sci Instrum | / 1 pt 1卷 / 178期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Combinatorial optimization of atomically controlled growth for oxide films by the carrousel type laser molecular beam epitaxy
    Takahashi, R
    Matsumoto, Y
    Koinuma, H
    Lippmaa, M
    Kawasaki, M
    COMBINATORIAL AND ARTIFICIAL INTELLIGENCE METHODS IN MATERIALS SCIENCE, 2002, 700 : 13 - 18
  • [22] Combinatorial optimization oxide films by the carrousel of atomically controlled growth for type laser molecular beam epitaxy
    Takahashi, R
    Matsumoto, Y
    Koinuma, H
    Lippmaa, M
    Kawasaki, M
    APPLIED SURFACE SCIENCE, 2002, 197 : 532 - 535
  • [23] Low Temperature Growth of GaN Epitaxial Layer on Sapphire (0001) Substrate by Laser Molecular Beam Epitaxy Technique
    Kumar, M. Senthil
    Kushvaha, S. S.
    Maurya, K. K.
    PHYSICS OF SEMICONDUCTOR DEVICES, 2014, : 807 - 809
  • [24] LASER-BEAM EPITAXY FOSTERS SUPERCONDUCTING THIN-FILM GROWTH
    MORTENSEN, P
    LASER FOCUS WORLD, 1993, 29 (04): : 84 - &
  • [25] Fabrication of atomically defined oxide films on Si by laser molecular beam epitaxy
    Koinuma, H
    Ohnishi, T
    Maeda, T
    Lee, MB
    Kawasaki, M
    Yoshimoto, M
    PHYSICA B, 1996, 227 (1-4): : 323 - 325
  • [26] Fabrication of atomically defined oxide films on Si by laser molecular beam epitaxy
    Koinuma, H.
    Ohnishi, T.
    Maeda, T.
    Lee, M.B.
    Kawasaki, M.
    Yoshimoto, M.
    Physica B: Condensed Matter, 1996, 227 (1-4): : 323 - 325
  • [27] InGaN laser diodes by molecular beam epitaxy
    Kauer, M
    Heffernan, J
    Hooper, SE
    Bousquet, V
    Johnson, K
    Zellweger, C
    NOVEL IN-PLANE SEMICONDUCTOR LASERS IV, 2005, 5738 : 245 - 252
  • [28] Laser induced molecular beam epitaxy of GaN
    Hüttner, B
    Gross, M
    Müller, T
    Schröder, H
    ECLAT - EUROPEAN CONFERENCE ON LASER TREATMENT OF MATERIALS, 1998, : 469 - 474
  • [29] Topmost surface and growth mechanism of BaTiO3 thin film grown by laser molecular beam epitaxy
    Cui, DF
    Chen, F
    Zhao, T
    Shi, WS
    Chen, ZH
    Zhou, YL
    Lü, HB
    Yang, GZ
    Huang, HZ
    Zhang, HX
    ACTA PHYSICA SINICA, 2000, 49 (09) : 1878 - 1882
  • [30] Topmost surface and growth mechanism of BaTiO3 thin film grown by laser molecular beam epitaxy
    Cui, Da-Fu
    Chen, Fan
    Zhao, Tong
    Shi, Wen-Sheng
    Chen, Zheng-Hao
    Zhou, Yue-Liang
    Lu, Hui-Bin
    Yang, Guo-Zhen
    Huang, Hui-Zhong
    Zhang, Hong-Xia
    Wuli Xuebao/Acta Physica Sinica, 2000, 49 (09): : 1881 - 1882
12345