MOCVD growth of ordered Cd(1-x)ZnxTe epilayers

被引:0
|
作者
Cohen, K. [1 ]
Stolyarova, S. [1 ]
Amir, N. [1 ]
Chack, A. [2 ]
Beserman, R. [2 ]
Weil, R. [2 ]
Nemirovsky, Y. [1 ]
机构
[1] Department of Electrical Engineering, Kidron Microlectron. Research Center, Technion, 32000 Haifa, Israel
[2] Department of Physics, Solid State Institute, Technion, Haifa 32000, Israel
来源
Journal of Crystal Growth | 1999年 / 198-199卷 / pt 2期
关键词
Number:; -; Acronym:; Sponsor: Ministry of Aliyah and Immigrant Absorption; ISF; Sponsor: Israel Science Foundation;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:1174 / 1178
相关论文
共 50 条
  • [11] Growth temperature effect on the optical and material properties of AlxInyGa1-x-yN epilayers grown by MOCVD
    Huang, JS
    Dong, X
    Luo, XD
    Li, DB
    Liu, XL
    Xu, ZY
    Ge, WK
    JOURNAL OF CRYSTAL GROWTH, 2003, 247 (1-2) : 84 - 90
  • [12] MOCVD of Cd(1-x)Zn(x)S/CdTe PV cells using an ultra-thin absorber layer
    Clayton, A. J.
    Irvine, S. J. C.
    Jones, E. W.
    Kartopu, G.
    Barrioz, V.
    Brooks, W. S. M.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2012, 101 : 68 - 72
  • [13] THE GROWTH AND CHARACTERIZATION OF ZNSE EPILAYERS GROWN BY VPE AND MOCVD
    SU, YK
    CHANG, CC
    WEI, CC
    PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1988, 17 (04): : 241 - 263
  • [14] Characterization of CdTe substrates and MOCVD Cd1-xZnxTe epilayers by Raman, photoluminescence and X-ray diffraction techniques
    Levy, M
    Amir, N
    Khanin, E
    Muranevich, A
    Nemirovsky, Y
    Beserman, R
    JOURNAL OF CRYSTAL GROWTH, 1998, 187 (3-4) : 367 - 372
  • [15] TILT GROWTH OF CDTE EPILAYERS ON SAPPHIRE SUBSTRATES BY MOCVD
    EBE, H
    SAWADA, A
    MARUYAMA, K
    NISHIJIMA, Y
    SHINOHARA, K
    TAKIGAWA, H
    JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 718 - 722
  • [16] Growth and properties of MOCVD HgCdTe epilayers on GaAs substrates
    Madejczyk, P
    Piotrowski, A
    Gawron, W
    Klos, K
    Pawluczyk, J
    Rutkowski, J
    Piotrowski, J
    Rogalski, A
    OPTO-ELECTRONICS REVIEW, 2005, 13 (03) : 239 - 251
  • [17] INTERDIFFUSION OF CHALCOGENES IN SEMICONDUCTOR ALLOYS CD(TEXSE(1-X)) AND ZN(TEXSE(1-X))
    LEUTE, V
    BLOMER, F
    ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-FRANKFURT, 1974, 89 (1-4): : 15 - 31
  • [18] PASSIVATION OF HG(1-X)CD(X)TE BY PHOTOCHEMICAL NATIVE OXIDATION - GROWTH-CHARACTERISTICS
    WINTON, GH
    PRASAD, K
    FARAONE, L
    JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (04) : 365 - 373
  • [19] Progress in MOCVD growth of HgCdTe epilayers for HOT infrared detectors
    Keblowski, A.
    Gawron, W.
    Martyniuk, P.
    Stepien, D.
    Kolwas, K.
    Piotrowski, J.
    Madejczyk, P.
    Kopytko, M.
    Piotrowski, A.
    Rogalski, A.
    INFRARED TECHNOLOGY AND APPLICATIONS XLII, 2016, 9819
  • [20] Three-step growth optimization of AlN epilayers by MOCVD
    Peng Ming-Zeng
    Guo Li-Wei
    Zhang Jie
    Yu Nai-Sen
    Zhu Xue-Liang
    Yan Jian-Feng
    Ge Bin-Hui
    Jia Hai-Qiang
    Chen Hong
    Zhou Jun-Ming
    CHINESE PHYSICS LETTERS, 2008, 25 (06) : 2265 - 2268