High-brightness light-emitting diodes grown by molecular beam epitaxy on ZnSe substrates

被引：0
|
作者：
Eason, D.B. [1 ]
Yu, Z. [1 ]
Hughes, W.C. [1 ]
Boney, C. [1 ]
Cook Jr., J.W. [1 ]
Schetzina, J.F. [1 ]
Black, D.R. [1 ]
Cantwell, Gene [1 ]
Harsch, William C. [1 ]
机构：
[1] North Carolina State Univ, Raleigh, United States
来源：
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 1995年 / 13卷 / 04期
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页码：1566 / 1570
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