Silicon metal-oxide-semiconductor field-effect transistor with gate structures defined by scanned probe lithography

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作者：
Hagedorn, M.S.
Litfin, D.D.
Price, G.M.
Gordon, A.E.
Higman, T.K.
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Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena | 1996年 / 14卷 / 06期
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