BIPOLAR TRANSISTOR CAD MODEL INCLUDING QUASI-SATURATION.

被引：0
|
作者：
Tani, Kunio
Dang, Ryo
机构：
来源：
Hosei Daigaku Kogakubu kenkyu shuho | 1988年 / 24期
关键词：
COMPUTER SIMULATION - INTEGRATED CIRCUITS - Components - TRANSISTORS - Mathematical Models;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
This paper describes a bipolar transistor model including quasi-saturation behavior. A technique for simulating the current model of an integrated circuit bipolar junction transistor for application to a circuit simulation program is presented. The simulated results are found to be in excellent agreement with measurements.
引用
收藏
页码：13 / 22
相关论文
共 50 条
  • [41] An optical absorption model including absorber saturation
    Matthias Auf der Maur
    Desiree Gentilini
    Aldo Di Carlo
    Seung-Il Cha
    Dong Yoon Lee
    Journal of Computational Electronics, 2016, 15 : 1064 - 1070
  • [42] A Quasi-Ballistic Model for Short Channel Monolayer Graphene Field Effect Transistor Including Scattering Effects
    Bardhan, Sudipta
    Sahoo, Manodipan
    Samanta, Jagannath
    Rahaman, Hafizur
    IETE JOURNAL OF RESEARCH, 2024, 70 (09) : 7451 - 7462
  • [43] An optical absorption model including absorber saturation
    der Maur, Matthias Auf
    Gentilini, Desiree
    Di Carlo, Aldo
    Cha, Seung-Il
    Lee, Dong Yoon
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2016, 15 (03) : 1064 - 1070
  • [44] A SIMPLE-MODEL FOR THE MOS-TRANSISTOR IN SATURATION
    ELNOKALI, M
    MIRANDA, H
    SOLID-STATE ELECTRONICS, 1986, 29 (06) : 591 - 596
  • [45] A DC MODEL FOR AN MOS-TRANSISTOR IN THE SATURATION REGION
    POORTER, T
    SATTER, JH
    SOLID-STATE ELECTRONICS, 1980, 23 (07) : 765 - 772
  • [46] Improved Temperature-Scalable DC model for SiC power MOSFET including Quasi-Saturation effect
    Er-rafii, Hicham
    Galadi, Abdelghafour
    SOLID-STATE ELECTRONICS, 2024, 220
  • [47] Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects
    Chauhan, Yogesh Singh
    Anghel, Costin
    Krummenacher, Francois
    Maier, Christian
    Gillon, Renaud
    Bakeroot, Benoit
    Desoete, Bart
    Frere, Steven
    Desormeaux, Andre Baguenier
    Sharma, Abhinav
    Declercq, Michel
    Ionescu, Adrian Mihai
    SOLID-STATE ELECTRONICS, 2006, 50 (11-12) : 1801 - 1813
  • [48] Electrothermal SPICE macromodeling of the power bipolar transistor including the avalanche and secondary breakdowns
    Maxim, A
    Maxim, G
    IECON '98 - PROCEEDINGS OF THE 24TH ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, VOLS 1-4, 1998, : 348 - 352
  • [49] A PHYSICS-BASED, ANALYTICAL HETEROJUNCTION BIPOLAR-TRANSISTOR MODEL INCLUDING THERMAL AND HIGH-CURRENT EFFECTS
    LIOU, JJ
    LIOU, LL
    HUANG, CI
    BAYRAKTAROGLU, B
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (09) : 1570 - 1577
  • [50] AN IMPROVED ANALYTICAL DESCRIPTION OF THE EFFECT OF VELOCITY SATURATION ON THE COLLECTOR CURRENT OF A BIPOLAR-TRANSISTOR
    HURKX, GAM
    SOLID-STATE ELECTRONICS, 1992, 35 (10) : 1397 - 1399
12345