BIPOLAR TRANSISTOR CAD MODEL INCLUDING QUASI-SATURATION.

被引：0
|
作者：
Tani, Kunio
Dang, Ryo
机构：
来源：
Hosei Daigaku Kogakubu kenkyu shuho | 1988年 / 24期
关键词：
COMPUTER SIMULATION - INTEGRATED CIRCUITS - Components - TRANSISTORS - Mathematical Models;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
This paper describes a bipolar transistor model including quasi-saturation behavior. A technique for simulating the current model of an integrated circuit bipolar junction transistor for application to a circuit simulation program is presented. The simulated results are found to be in excellent agreement with measurements.
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页码：13 / 22
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