共 50 条
- [31] Luminescence determination of donor concentration in n-type 6H-SiC MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3): : 304 - 307
- [33] Luminescence determination of donor concentration in n-type 6H-SiC Mater Sci Eng B Solid State Adv Technol, 1-3 (304-307):
- [34] Ti Schottky barrier diodes on n-type 6H-SiC SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 1183 - 1186
- [35] Investigation of charge build-up in NO nitrided gate oxide on 4H-SiC during Fowler-Nordheim injection and fabrication of 4H-SiC Lateral Double-Implanted MOSFETs 2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014), 2014,
- [36] Modified Fowler-Nordheim tunnelling for modelling charge injection into Si3N4 in an Al/Si3N4/Si structure APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2012, 109 (03): : 539 - 545
- [37] Electrically active defects in n-type 4H- and 6H-SiC SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 565 - 568