INFLUENCE OF CARBON ON THE DEFECT GENERATION IN IG SILICON WAFERS.

被引：0

作者：

Tan, Songsheng ^{[1
]}

Shen, Jinyuan ^{[1
]}

Li, Yuezhen ^{[1
]}

机构：

[1] Acad Sinica, China, Acad Sinica, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1986年 / 7卷 / 05期

关键词：

CARBON - PHYSICAL CHEMISTRY - THERMAL EFFECTS;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The influence of carbon on the defect formation during oxygen intrinsic gettering (IG) process has been studied for CZ silicon. It is found that IG defects are fewer for wafers containing higher carbon concentration, although the precipitation rate of oxygen at 750 degree C is higher for the same sample. During the temperature treatment at 750 degree C, the wafers containing higher carbon concentration appear to precipitate the oxygen and carbon simultaneously and to form C-O complexes. This kind of oxygen precipitation will be dissolved at temperatures higher than 900 degree C, so it does not contribute to the generation of IG defects. This paper conducts some interesting results to indicate that the SiO//x complexes generated at low temperatures dominate the nucleation centers of IG defects.

引用

页码：489 / 496

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