ELS, AES, LEED study of Ge/Si(111) and Ge/Si(100) interfaces

被引:0
|
作者
Zhu, Furong
Yu, Ming-ren
Wang, Xun
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] LEED AES STUDIES OF THE GE ON SI(111)7X7 SURFACE
    SHOJI, K
    HYODO, M
    UEBA, H
    TATSUYAMA, C
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (03): : L200 - L202
  • [2] AFM and RHEED study of Ge islanding on Si(111) and Si(100)
    Deelman, PW
    Thundat, T
    Schowalter, LJ
    [J]. APPLIED SURFACE SCIENCE, 1996, 104 : 510 - 515
  • [3] Valence band offsets at strained Ge/Sb/Si(100) and Ge/H/Si(100) interfaces
    Almeida, J
    Sirigu, L
    Margaritondo, G
    Da Padova, P
    Quaresima, C
    Perfetti, P
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1999, 32 (03) : 191 - 194
  • [4] Valence band offsets at strained Ge/Sb/Si(100) and Ge/H/Si(100) interfaces
    Almeida, J.
    Sirigu, L.
    Margaritondo, G.
    Da Padova, P.
    Quaresimai, C.
    Perfetti, P.
    [J]. Journal of Physics D: Applied Physics, 32 (03): : 191 - 194
  • [5] RHEED STUDY ON THE GE/SI(111) AND SI/GE(111) SYSTEMS - REACTION OF GE WITH THE SI(111)(7X7) SURFACE
    ICHIKAWA, T
    INO, S
    [J]. SURFACE SCIENCE, 1984, 136 (2-3) : 267 - 284
  • [6] Mixed Ge-Si dimer formation in Ge/Si(100) and Si/Ge(100) growth
    Ko, YJ
    Park, KH
    Ha, JS
    Yun, WS
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (7B): : 4295 - 4297
  • [7] Mixed Ge-Si dimer formation in Ge/Si(100) and Si/Ge(100) growth
    Ko, Young-Jo
    Park, Kang-Ho
    Ha, Jeong Sook
    Yun, Wan Soo
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (7 B): : 4295 - 4297
  • [8] Composition of Ge(Si) islands in the growth of Ge on Si(111)
    Ratto, F
    Rosei, F
    Locatelli, A
    Cherifi, S
    Fontana, S
    Heun, S
    Szkutnik, PD
    Sgarlata, A
    De Crescenzi, M
    Motta, N
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (22) : 4526 - 4528
  • [9] Size of small Si and Ge clusters on Si(111) and Ge(111) surfaces
    Asaoka, H
    Cherepanov, V
    Voigtländer, B
    [J]. SURFACE SCIENCE, 2005, 588 (1-3) : 19 - 25
  • [10] THEORETICAL-STUDIES OF INTERFACE SI(111)-GE AND GE(111)-SI
    XU, YN
    ZHANG, KM
    XIE, X
    [J]. SOLID STATE COMMUNICATIONS, 1983, 47 (02) : 93 - 96