Sharp exciton photoluminescence in low-temperature-grown GaAs/AlGaAs multiple quantum wells

被引：0
|
作者：
Guo, Liwei [1 ]
Han, Yinjun [1 ]
Bao, Changlin [1 ]
Dai, Daoyang [1 ]
Huang, Qi [1 ]
Zhou, Junming [1 ]
机构：
[1] Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 6 A期
关键词：
Density (optical) - Electric properties - Excitons - Heterojunctions - Interfaces (materials) - Low temperature effects - Molecular beam epitaxy - Photoluminescence - Semiconducting aluminum compounds - Semiconducting gallium arsenide - X ray diffraction analysis;
D O I：
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学科分类号：
摘要：
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页码：3762 / 3765
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