Ultrafast, dual-depletion region, InGaAs/InP p-i-n detector

被引：0
|
作者：
Bellcore, Morristown, United States [1 ]
机构：
来源：
J Lightwave Technol | / 8卷 / 1859-1864期
关键词：
Capacitance - Electrons - Light absorption - Numerical methods - Permittivity - Semiconducting indium compounds - Semiconducting indium phosphide - Semiconductor device structures;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Analysis of InGaAs/InP p-I-n Photodiode Failed by Electrostatic Discharge
    Ito, Yuta
    Yokogawa, Ryo
    Ueda, Osamu
    Sawamoto, Naomi
    Ide, Koki
    Men, Longxiang
    Ogura, Atsushi
    JOURNAL OF ELECTRONIC MATERIALS, 2023, 52 (08) : 5150 - 5158
  • [22] Cadmium sulfide passivation of InGaAs/InP mesa p-i-n photodiodes
    Teynor, WA
    Vaccaro, K
    Buchwald, WR
    Dauplaise, HM
    Morath, CP
    Davis, A
    Roland, MA
    Clark, WR
    JOURNAL OF ELECTRONIC MATERIALS, 2005, 34 (11) : 1368 - 1372
  • [23] SiOx coverage mesa-typed InGaAs/InP P-I-N photodetector
    Tang, Shiang-Feng
    Liao, Xue-Liang
    Tsai, Hong-Niau
    Hao-Lai, Man
    Chen, Tzu-Chiang
    Chuang, Hsiu Hsiu
    Yang, San-Te
    Chiang, Cheng-Der
    2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4, 2007, : 1199 - +
  • [24] Minority carrier diffusion in InGaAs/InP P-i-N heterojunctions for photodetector arrays
    Walker, A. W.
    Pitts, O. J.
    Storey, C.
    Waldron, P.
    Flueraru, C.
    OPTICAL AND QUANTUM ELECTRONICS, 2020, 52 (02)
  • [25] Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-i-n photodiodes transferred on silicon
    Chen, Peng
    Chen, Winnie V.
    Yu, Paul K. L.
    Tang, Chak Wah
    Lau, Kei May
    Mawst, Luke
    Paulson, Charles
    Kuech, T. F.
    Lau, S. S.
    APPLIED PHYSICS LETTERS, 2009, 94 (01)
  • [26] High-Current Backside-Illuminated InGaAs/InP p-i-n Potodiode
    Itakura, Shigetaka
    Sakai, Kiyohide
    Nagatsuka, Tsutomu
    Akiyama, Tomohiro
    Hirano, Yoshihito
    Ishimura, Eitaro
    Nakaji, Masaharu
    Aoyagi, Toshitaka
    MWP: 2009 INTERNATIONAL TOPICAL MEETING ON MICROWAVE PHOTONICS, 2009, : 23 - +
  • [27] A monolithically integrated InGaAs-InP p-i-n/JFET focal plane array
    Kim, DS
    Forrest, SR
    Lange, MJ
    Olsen, GH
    Kosonocky, W
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (04) : 566 - 568
  • [28] Breakdown characteristics in InP/InGaAs avalanche photodiode with p-i-n multiplication layer structure
    Hyun, KS
    Park, CY
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (02) : 974 - 984
  • [29] A LOW DARK CURRENT INGAAS/INP P-I-N PHOTODIODE WITH COVERED MESA STRUCTURE
    OHNAKA, K
    KUBO, M
    SHIBATA, J
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) : 199 - 204
  • [30] Monolithically integrated InGaAs-InP p-i-n/JFET focal plane array
    Princeton Univ, Princeton, United States
    IEEE Photonics Technol Lett, 4 (566-568):
12345