Arsenic-free high-temperature surface cleaning of molecular beam epitaxy (MBE)-grown AlGaAs layer with new passivation structure

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作者：
Iizuka, Kanji [1 ]
Watanabe, Hideharu [1 ]
Suzuki, Toshimasa [1 ]
Okamoto, Hiroshi [2 ]
机构：
[1] Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Minami-S., Saitama 345-8501, Japan
[2] Faculty of Engineering, Chiba Univ., 1-33 Yayoi-cho, I., Chiba 263-0022, Japan
来源：
Journal of Crystal Growth | 1999年 / 201卷
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页码：174 / 177
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