Arsenic-free high-temperature surface cleaning of molecular beam epitaxy (MBE)-grown AlGaAs layer with new passivation structure

被引：0

作者：

Iizuka, Kanji ^{[1
]}

Watanabe, Hideharu ^{[1
]}

Suzuki, Toshimasa ^{[1
]}

Okamoto, Hiroshi ^{[2
]}

机构：

[1] Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Minami-S., Saitama 345-8501, Japan

[2] Faculty of Engineering, Chiba Univ., 1-33 Yayoi-cho, I., Chiba 263-0022, Japan

来源：

Journal of Crystal Growth | 1999年 / 201卷

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D O I：

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摘要：

引用

页码：174 / 177

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