Heavily carbon-doped p-type GaAs grown on GaAs substrates with various orientations by metalorganic molecular beam epitaxy

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Guo, Li-Qi [1 ]
Konagai, Makoto [1 ]
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[1] Tokyo Inst of Technology, Tokyo, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1996年 / 35卷 / 2 B期
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