Application of the ferroelectric materials to ULSI memories

被引:0
|
作者
Waseda Univ, Tokyo, Japan [1 ]
机构
来源
Appl Surf Sci | / 656-663期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] ASSESSING FERROELECTRIC MATERIALS FOR APPLICATION IN τVMIN MODE DEVICES
    Slaney, Andrew John
    Minter, Victoria
    Jones, John Clifford
    FERROELECTRICS, 1996, 178 : 65 - 74
  • [42] Application of TDPAC (a nuclear method) to ferroelectric materials research
    Ohkubo, Y
    Murakami, YY
    Saito, T
    Yokoyama, A
    Uehara, S
    Kawase, Y
    PRICM 4: FORTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, VOLS I AND II, 2001, : 575 - 578
  • [43] DIELECTRIC MATERIALS FOR ADVANCED VLSI AND ULSI TECHNOLOGIES
    OBENG, YS
    STEINER, KG
    VELAGA, AN
    PAI, CS
    AT&T TECHNICAL JOURNAL, 1994, 73 (03): : 94 - 111
  • [44] Anomalous low temperature charge leakage mechanism in ULSI flash memories
    Lam, C
    Sunaga, T
    Igarashi, Y
    Ichinose, M
    Kitamura, K
    Willets, C
    Johnson, J
    Mittl, S
    White, F
    Tang, H
    Chen, TC
    INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, : 335 - 338
  • [45] The formation of a SiOx interfacial layer on low-k SiOCH materials fabricated in ULSI application
    Huang, C. H.
    Wang, N. F.
    Tsai, Y. Z.
    Liu, C. C.
    Hung, C. I.
    Houng, M. P.
    MATERIALS CHEMISTRY AND PHYSICS, 2008, 110 (2-3) : 299 - 302
  • [46] Challenges to advanced materials characterization for ULSI applications
    Diebold, AC
    MATERIALS FOR INFORMATION TECHNOLOGY: DEVICES, INTERCONNECTS AND PACKAGING, 2005, : 421 - 435
  • [47] Low dielectric constant materials for ULSI interconnects
    Morgen, M
    Ryan, ET
    Zhao, JH
    Hu, C
    Cho, TH
    Ho, PS
    ANNUAL REVIEW OF MATERIALS SCIENCE, 2000, 30 : 645 - 680
  • [48] Comparative Study of Reliability of Ferroelectric and Anti-Ferroelectric Memories
    Pesic, Milan
    Schroeder, Uwe
    Slesazeck, Stefan
    Mikolajick, Thomas
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2018, 18 (02) : 154 - 162
  • [49] Polarization reversal property of ferroelectric thin film for ferroelectric memories
    Masuda, Yoichiro
    Echizen, Masahiro
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1600, 45 (2 A): : 817 - 821
  • [50] Polarization reversal property of ferroelectric thin film for ferroelectric memories
    Masuda, Y
    Echizen, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (2A): : 817 - 821