Low temperature growth of epitaxial (Ba,Sr)TiO3 thin film by sputter molecular beam epitaxy method

被引：0
|
作者：
Horiguchi, Atsushi [1 ]
Watanabe, Yukio [1 ]
机构：
[1] Kyushu Institute of Technology, Kitakyushu, Fukuoka 804-8550, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 9 B期
关键词：
Annealing - Atomic force microscopy - Barium titanate - Ferroelectric materials - Film growth - Molecular beam epitaxy - Sputter deposition - Surface roughness - Thin films;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A novel sputtering method that can be regarded as a new version of the molecular beam epitaxy (MBE) method is proposed. Epitaxial (Ba,Sr)TiO3 films are grown at a pressure below 6×10-4 Torr at a large target-substrate distance of 24 cm. The highest temperature in all the deposition process including the in-situ post annealing is 350 °C. Additionally, a very smooth surface is confirmed by an atomic force microscopy.
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页码：5314 / 5316
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