Low temperature growth of epitaxial (Ba,Sr)TiO3 thin film by sputter molecular beam epitaxy method

被引：0

作者：

Horiguchi, Atsushi ^{[1
]}

Watanabe, Yukio ^{[1
]}

机构：

[1] Kyushu Institute of Technology, Kitakyushu, Fukuoka 804-8550, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 9 B期

关键词：

Annealing - Atomic force microscopy - Barium titanate - Ferroelectric materials - Film growth - Molecular beam epitaxy - Sputter deposition - Surface roughness - Thin films;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A novel sputtering method that can be regarded as a new version of the molecular beam epitaxy (MBE) method is proposed. Epitaxial (Ba,Sr)TiO3 films are grown at a pressure below 6×10-4 Torr at a large target-substrate distance of 24 cm. The highest temperature in all the deposition process including the in-situ post annealing is 350 °C. Additionally, a very smooth surface is confirmed by an atomic force microscopy.

引用

页码：5314 / 5316

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