Polycrystal isolation of InGaP/GaAs HBT's to reduce collector capacitance

被引：0
|
作者：
Hitachi Ltd, Tokyo, Japan [1 ]
机构：
来源：
IEEE Electron Device Lett | / 2卷 / 47-49期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] A InGaP/GaAs HBT WLAN power amplifier with power detector
    Lee, KA
    Lee, DH
    Park, HM
    Cheon, SH
    Park, JW
    Yoo, HM
    Hong, S
    34TH EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS, 2004, : 345 - 347
  • [32] A broadband regenerative frequency divider in InGaP/GaAs HBT technology
    张金灿
    张玉明
    吕红亮
    张义门
    刘敏
    钟英辉
    师政
    Journal of Semiconductors, 2014, (07) : 143 - 146
  • [33] Comparative Analysis of InGaP/GaAs HBT Differential Colpitts VCOs
    Shrestha, Bhanu
    Wang, Cong
    Kim, Nam-Young
    APMC: 2008 ASIA PACIFIC MICROWAVE CONFERENCE (APMC 2008), VOLS 1-5, 2008, : 2114 - 2117
  • [34] Direct extraction of InGaP/GaAs HBT large signal model
    Raghavan, A
    Banerjee, B
    Venkataraman, S
    Laskar, J
    GAAS IC SYMPOSIUM - 24TH ANNUAL, TECHNICAL DIGEST 2002, 2002, : 225 - 228
  • [35] InGaP/GaAs HBT器件的制备及其特性
    周国
    何先良
    谭永亮
    杜光伟
    孙希国
    崔玉兴
    半导体技术, 2017, 42 (04) : 279 - 282+320
  • [36] Comprehensive Analysis of traps in InGaP/GaAs HBT by GR noise
    Al Hamar, Ahmad
    Nallatamby, Jean-Christophe
    Prigent, Michel
    2014 10TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME 2014), 2014,
  • [37] VBIC model applicability and extraction procedure for InGaP/GaAs HBT
    Cherepko, SV
    Hwang, JCM
    APMC 2001: ASIA-PACIFIC MICROWAVE CONFERENCE, VOLS 1-3, PROCEEDINGS, 2001, : 716 - 721
  • [38] Improvement of reliability of GaAs HBT with InGaP ledge emitter structure
    Song, CK
    Choi, PJ
    Kim, DY
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1998, 33 : S370 - S373
  • [39] InGaP/GaAs HBT implantation leakage current and electrical breakdown
    Shen, H
    Arrale, AM
    Dai, P
    Tiku, S
    Ramanathan, R
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2004, 7 (1-2) : 63 - 68
  • [40] Thermal characteristics of InGaP/GaAs HBT ballasted with extended ledge
    Jeon, S
    Park, HM
    Hong, S
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (10) : 2442 - 2445
12345