GATE TURN-OFF THYRISTOR IN TRACTION APPLICATIONS.

被引：0

作者：

Gibson, H. ^{[1
]}

Heard, J.S. ^{[1
]}

Taylor, P.D. ^{[1
]}

Whiting, J.M.W. ^{[1
]}

机构：

[1] GEC, Stafford, Engl, GEC, Stafford, Engl

来源：

| 1986年

关键词：

ELECTRIC MOTORS - Traction - ELECTRIC TRACTION;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The successful introduction of the gate turn-off (GTO) thyristor in the UK traction industry has been the result of collaboration between Marconi Electronic Devices Ltd, GEC Stafford Laboratories and GEC Traction Ltd. A large investment in manufacturing facilities and in application-oriented development has been made and has placed GEC in a position to compete vigorously in the world traction market. This article looks at some of the reasons why the GTO is so attractive for traction applications.

引用

共 50 条

[21] Fast gate turn-off in a merged thyristor-like structure
Gordion, IM
Gribnikov, ZS
Korobov, VA
Mitin, VV
SOLID-STATE ELECTRONICS, 2000, 44 (10) : 1723 - 1732
[22] A TIME-DEPENDENT 2-DIMENSIONAL ANALYSIS OF THE TURN-OFF PROCESS IN A GATE TURN-OFF THYRISTOR (GTO)
VOBECKY, J
BLEICHNER, H
ROSLING, M
NORDLANDER, E
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (12) : 2352 - 2358
[23] Characterization of 4H-SiC gate turn-off thyristor
Cao, LH
Li, BH
Zhao, JH
SOLID-STATE ELECTRONICS, 2000, 44 (02) : 347 - 352
[24] TRANSIENT MODEL FOR GATE TURN-OFF THYRISTOR IN POWER ELECTRONIC SIMULATIONS
LIANG, YC
GOSBELL, VJ
INTERNATIONAL JOURNAL OF ELECTRONICS, 1991, 70 (01) : 85 - 99
[25] INFRARED OBSERVATION OF GATE TURN-OFF THYRISTOR SEGMENT PARAMETER NONUNIFORMITY
HATLE, M
VOBECKY, J
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (04) : 1169 - 1171
[26] Physical insight into turn-on transient of silicon carbide gate turn-off thyristor
Liu, Hangzhi
Liang, Shiwei
Zhou, Yuming
Wang, Jun
IET POWER ELECTRONICS, 2024, 17 (07) : 878 - 889
[27] CAPACITOR TURN-OFF CONNECTION WITH TURN-OFF THYRISTOR PAIR OF ANTIPARALLEL ARMS
NESTLER, J
ETZ ARCHIV, 1984, 6 (12): : 407 - 414
[28] Analytical model of a gate turn-off thyristor with nonmonotonic displacement of residual plasma
A. V. Gorbatyuk
Technical Physics Letters, 2008, 34 : 206 - 209
[29] Discussion on the turn-off transient behaviours of integrated gate-commutated thyristor
College of Electric and Electronics Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
Zhongguo Dianji Gongcheng Xuebao, 2007, 7 (103-107):
[30] 2500-V 600-A GATE TURN-OFF THYRISTOR (GTO)
AZUMA, M
KURATA, M
TAKIGAMI, K
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (03) : 270 - 274

← 1 2 3 4 5 →