共 50 条
- [2] Transition of particle growth region in SiH4 RF discharges Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1998, 37 (10): : 5757 - 5762
- [3] Transition of particle growth region in SiH4 RF discharges JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (10): : 5757 - 5762
- [5] Simulation of the electrical properties of SiH4/H2 RF discharges JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (10B): : 8172 - 8176
- [6] In situ ir optical measurements of gas properties in a capacitively coupled rf Ar/SiH4 plasma HIGH TEMPERATURE MATERIAL PROCESSES, 2005, 9 (01): : 159 - 171
- [7] Spatial distribution of optical emission in SiH4/H2 RF discharges HIGH TEMPERATURE MATERIAL PROCESSES, 1999, 3 (2-3): : 255 - 261
- [8] EFFECT OF DILUTION GASES ON THE SIH3 RADICAL DENSITY IN AN RF SIH4 PLASMA JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (7B): : 4165 - 4169
- [10] Effect of dilution gases on the SiH3 radical density in an RF SiH4 plasma Nomura, Hideshi, 1600, JJAP, Minato-ku, Japan (33):