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Interface reactions in ZrO2 based gate dielectric stacks

被引：0
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作者：
Gribelyuk, M.A. [1 ]
Callegari, A. [2 ]
Gusev, E.P. [2 ]
Copel, M. [2 ]
Buchanan, D.A. [2 ]
机构：
[1] IBM Microelectronics Division, Hopewell Junction, NY 12533, United States
[2] IBM T. J. Watson Research Center, Yorktown Heights, NY, United States
来源：
Journal of Applied Physics | 2002年 / 92卷 / 03期
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页码：1232 / 1237
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