Investigation on crystallization of bulk samples of amorphous gallium antimonide by Raman scattering

被引：0

作者：

Demishev, S.V. ^{[1
]}

Kosichkin, Yu.V. ^{[1
]}

Lyapin, A.G. ^{[1
]}

Mel'nik, N.N. ^{[1
]}

Nekhaev, D.V. ^{[1
]}

Sluchanko, N.E. ^{[1
]}

Turok, O.A. ^{[1
]}

机构：

[1] Inst Obshchej Fiziki RAN, Moscow, Russia

来源：

Sbornik - Kratkie Soobshcheniya po Fizike AN SSSR | 1993年 / 1-2期

关键词：

Amorphous materials - Annealing - Crystallization - Crystals - Light scattering - Semiconducting gallium compounds - Spectrum analysis - Stress relief - Temperature measurement - Thermal effects;

D O I：

暂无

中图分类号：

TM23 []; TN304 [材料];

学科分类号：

摘要：

Crystallization-induced variations of Raman spectra have been studied for bulk samples of amorphous gallium antimonide. The character of the spectrum evolution was found to depend on the stress field variation in the sample in the course of annealing.

引用

页码：36 / 39

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