Characteristics of silicon thin p+ layers

被引：0
|
作者：
Changsha Railway Univ, Changsha, China [1 ]
机构：
来源：
Chin J Electron | / 4卷 / 10-13期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
下载
收藏
相关论文
共 50 条
  • [21] SELF ANNEALING EFFECTS IN P+ IMPLANTED SILICON
    BERTI, M
    DRIGO, AV
    GABILLI, E
    LOTTI, R
    LULLI, G
    MERLI, PG
    ANTISARI, MV
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 475 - 479
  • [22] A NEW CONDENSER MICROPHONE WITH A P+ SILICON MEMBRANE
    BOUROUINA, T
    SPIRKOVITCH, S
    BAILLIEU, F
    VAUGE, C
    SENSORS AND ACTUATORS A-PHYSICAL, 1992, 31 (1-3) : 149 - 152
  • [23] Pore Propagation Directions in P+ Porous Silicon
    É. Vázsonyi
    G. Battistig
    Z.E. Horváth
    M. Fried
    G. Kádár
    F. Pászti
    J.L. Cantin
    D. Vanhaeren
    L. Stalmans
    J. Poortmans
    Journal of Porous Materials, 2000, 7 : 57 - 61
  • [24] Optimization of P+ seeding layer for thin film silicon solar cell by liquid phase epitaxy
    Lee, E
    Lee, K
    Kim, D
    Lee, S
    PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 1214 - 1216
  • [25] Impact ionization in nonuniformly heated silicon p+–n–n+ and n+–p–p+ structures
    A. M. Musaev
    Semiconductors, 2016, 50 : 462 - 465
  • [26] The photoluminescence study of p-/p+ type porous silicon
    Sun, L
    Zhang, SL
    Zhang, L
    Guan, XD
    Han, RQ
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1998, 17 (19) : 1649 - 1651
  • [27] Structural defects in p/p+ silicon vapor phase epitaxy
    Fukuto, H
    Feichtinger, P
    Goorsky, MS
    Magee, T
    Oster, D
    Moreland, J
    PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON DEFECTS IN SILICON, 1999, 99 (01): : 162 - 171
  • [28] OXYGEN PRECIPITATION IN P/P+(100) EPITAXIAL SILICON MATERIAL
    WIJARANAKULA, W
    MATLOCK, JH
    MOLLENKOPF, H
    BURKE, P
    FORBES, L
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) : 2310 - 2316
  • [29] Internal gettering efficiency in p/p+ and p/p- silicon epistructures
    Frigeri, C
    Borionetti, G
    Godio, P
    Gombia, E
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2004, 95-96 : 593 - 598
  • [30] Electronic Characteristics of Ultra-Thin Passivation Layers for Silicon Photovoltaics
    Pain, Sophie L.
    Khorani, Edris
    Niewelt, Tim
    Wratten, Ailish
    Fajardo, Galo J. Paez
    Winfield, Ben P.
    Bonilla, Ruy S.
    Walker, Marc
    Piper, Louis F. J.
    Grant, Nicholas E.
    Murphy, John D.
    ADVANCED MATERIALS INTERFACES, 2022, 9 (28):
12345