Consistent structural properties of AlN, GaN, and InN

被引：0
|
作者：
Wright, A. F.
Nelson, J. S.
机构：
来源：
Pigment and Resin Technology | 1600年 / 24卷 / 12期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Growth of AlN, GaN and InN from the solution
    Krukowski, S
    Grzegory, I
    Bockowski, M
    Lucznik, B
    Suski, T
    Nowak, G
    Borysiuk, J
    Wróblewski, M
    Leszczynski, M
    Perlin, P
    Porowski, S
    Weyher, JL
    INTERNATIONAL JOURNAL OF MATERIALS & PRODUCT TECHNOLOGY, 2005, 22 (1-3): : 226 - 261
  • [22] Outdiffusion of deuterium from GaN, AlN, and InN
    Wilson, R.G.
    Pearton, S.J.
    Abernathy, C.R.
    Zavada, J.M.
    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 1995, 13 (03): : 719 - 723
  • [23] OUTDIFFUSION OF DEUTERIUM FROM GAN, ALN, AND INN
    WILSON, RG
    PEARTON, SJ
    ABERNATHY, CR
    ZAVADA, JM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03): : 719 - 723
  • [24] The structural properties of GaN insertions in GaN/AlN nanocolumn heterostructures
    Bougerol, C.
    Songmuang, R.
    Camacho, D.
    Niquet, Y. M.
    Mata, R.
    Cros, A.
    Daudin, B.
    NANOTECHNOLOGY, 2009, 20 (29)
  • [25] Structural and transport properties of InN grown on GaN by MBE
    Wang, Kejia
    Kosel, Thomas
    Jena, Debdeep
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 1811 - 1814
  • [26] Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions
    Polyakov, A. Y.
    Smirnov, N. B.
    Govorkov, A. V.
    Markov, A. V.
    Yugova, T. G.
    Dabiran, A. M.
    Wowchak, A. M.
    Cui, B.
    Osinsky, A. V.
    Chow, P. P.
    Pearton, S. J.
    Scherbaichev, K. D.
    Bublik, V. T.
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (05)
  • [27] Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions
    Polyakov, A.Y.
    Smirnov, N.B.
    Govorkov, A.V.
    Markov, A.V.
    Yugova, T.G.
    Dabiran, A.M.
    Wowchak, A.M.
    Cui, B.
    Osinsky, A.V.
    Chow, P.P.
    Pearton, S.J.
    Scherbatchev, K.D.
    Bublik, V.T.
    Journal of Applied Physics, 2008, 104 (05):
  • [28] Electronic and optical properties of zincblende AlN, GaN and InN compounds under pressure
    Berrah, S.
    Boukortt, A.
    Abid, H.
    PHYSICA SCRIPTA, 2007, 75 (04) : 414 - 418
  • [29] Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN
    Kim, K
    Lambrecht, WRL
    Segall, B
    PHYSICAL REVIEW B, 1996, 53 (24): : 16310 - 16326
  • [30] Acoustic waves in (001) InN-AlN and InN-GaN superlattices
    Nougaoui, A.
    Ouchani, N.
    Velasco, V. R.
    Bria, D.
    El Boudouti, E. H.
    Ben Ali, J.
    SURFACE SCIENCE, 2011, 605 (13-14) : 1324 - 1330
12345