Characterization of interface layer of silicon on sapphire using spectroscopic ellipsometry

被引：0
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作者：
Jayatissa, Ahalapitiya Hewage [1 ]
Yamaguchi, Tomuo [1 ]
Sawada, Kazuaki [1 ]
Aoyama, Mitsuru [1 ]
Sato, Fumio [1 ]
机构：
[1] Shizuoka Univ, Hamamatsu, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1997年 / 36卷 / 12 A期
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页码：7152 / 7155
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