Novel fabrication method for polycrystalline silicon thin-film transistors with a self-aligned lightly doped drain structure

被引：5

作者：

Kobayashi, Kazuhiro ^{[1
]}

Murai, Hiroyuki ^{[1
]}

Sakamoto, Takao ^{[1
]}

Baert, Kris ^{[1
]}

Tokioka, Hidetada ^{[1
]}

Sugawara, Takashi ^{[1
]}

Masutani, Yuuichi ^{[1
]}

Namizaki, Hirofumi ^{[1
]}

Nunoshita, Masahiro ^{[1
]}

机构：

[1] Mitsubishi Electric Corp, Hyogo, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1993年 / 32卷 / 1 B期

关键词：

12;

D O I：

10.1143/JJAP.32.469

中图分类号：

学科分类号：

摘要：

引用

页码：469 / 473

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