Effective channel length determination method for LDD MOSFET's

被引：0
|
作者：
NEC Corp, Kanagawa, Japan [1 ]
机构：
来源：
IEEE Trans Electron Devices | / 4卷 / 580-587期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] ON THE DETERMINATION OF THE EFFECTIVE CHANNEL-LENGTH OF MOSFETS
    PATEL, N
    GARCIA, M
    TITCOMB, S
    ANDERSON, R
    JOURNAL DE PHYSIQUE IV, 1994, 4 (C6): : 25 - 29
  • [42] Determination of LDD MOSFET drain resistance from device simulation
    Samudra, GS
    Seah, BP
    Ling, CH
    SOLID-STATE ELECTRONICS, 1996, 39 (05) : 753 - 758
  • [43] Channel length independent subthreshold characteristics in submicron MOSFET's
    Ewha Woman's Univ, Seoul, Korea, Republic of
    IEEE Electron Device Lett, 4 (137-139):
  • [44] Channel length independent subthreshold characteristics in submicron MOSFET's
    Shin, HS
    Lee, C
    Hwang, SW
    Park, BG
    Park, YJ
    Min, HS
    IEEE ELECTRON DEVICE LETTERS, 1998, 19 (04) : 137 - 139
  • [45] A NEW METHOD TO ELECTRICALLY DETERMINE EFFECTIVE MOSFET CHANNEL WIDTH
    MA, YR
    WANG, KL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) : 1825 - 1827
  • [46] Accurate RF C-V Method to Extract Effective Channel Length and Parasitic Capacitance of Deep-Submicron LDD MOSFETs
    Lee, Sangjun
    Lee, Seonghearn
    JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2015, 15 (06) : 653 - 657
  • [47] Practical accuracy analysis of some existing effective channel length and series resistance extraction methods for MOSFET's
    Biesemans, S
    Hendriks, M
    Kubicek, S
    De Meyer, K
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (06) : 1310 - 1316
  • [48] A NEW SHIFT AND RATIO METHOD FOR MOSFET CHANNEL-LENGTH EXTRACTION
    TAUR, Y
    ZICHERMAN, DS
    LOMBARDI, DR
    RESTLE, PJ
    HSU, CH
    HANAFI, HI
    WORDEMAN, MR
    DAVARI, B
    SHAHIDI, GG
    IEEE ELECTRON DEVICE LETTERS, 1992, 13 (05) : 267 - 269
  • [49] MOSFET channel length: Extraction and interpretation
    Taur, Y
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (01) : 160 - 170
  • [50] Characteristic Length of Macaroni Channel MOSFET
    Quan Nguyen-Gia
    Kang, Myounggon
    Jeon, Jongwook
    Shin, Hyungcheol
    IEEE ELECTRON DEVICE LETTERS, 2019, 40 (11) : 1720 - 1723
12345