Characterization of 193 nm chemically amplified resist during post exposure bake and post exposure delay

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Department of Physics, Hanyang University, Ansan, Kyunggido 425-791, Korea, Republic of [1 ]
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Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 12 B卷 / 7094-7098期
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