HOT-ELECTRON AND HOLE-EMISSION EFFECTS IN SHORT n-CHANNEL MOSFET's.

被引：0
|
作者：
Hofmann, Karl R. [1 ]
Werner, Christoph [1 ]
Weber, Werner [1 ]
Dorda, Gerhard [1 ]
机构：
[1] Siemens AG, Munich, West Ger, Siemens AG, Munich, West Ger
来源：
IEEE Transactions on Electron Devices | 1985年 / ED-32卷 / 03期
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摘要：
43
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页码：691 / 699
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