Very low contrast x-ray masks for high resolution printing

被引：0
|
作者：
Chen, Y. [1 ]
Simon, G. [1 ]
Haghiri-Gosnet, A.M. [1 ]
Manin, L. [1 ]
Launois, H. [1 ]
机构：
[1] Lab de Microstructures et de, Microelectronique, Bagneux, France
来源：
Microelectronic Engineering | 1998年 / 41-42卷
关键词：
Fabrication - Numerical analysis - Synchrotron radiation - X ray lithography;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We propose a scheme for high resolution soft-contact printing with very low contrast X-ray masks. The scheme is based on the strongly enhanced image contrast due to absorber edge effects. In addition to a numerical analysis, we also investigate the mask fabrication with an absorber thickness of 0.15 μm (W) and the replication with synchrotron radiation of ultra high density features.
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页码：275 / 278
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