CHARGE TRANSPORT BY THE ION SHUNT EFFECT.

Information on the quantity of charge transported between two junctions by the ion shunt effect is presented as a function of bias voltages and ionization densities. A model has been used of charge collection in multiple junction structures that ignores the ion track shunt effect. This model predicts the amount of charge collection expected in the absence of the ion shunt effect and the differences between the predicted quantities and those measured experimentally are then presumed to be due to the ion shunt effect. The parameters of the model were adjusted to give agreement with the data for the ion with the least-dense ionization for which reliable data could be obtained, since the ion shunt effect should be a minimum under these conditions.