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- [41] The Photoluminescence Properties of β-Ga2O3 Thin FilmsJOURNAL OF ELECTRONIC MATERIALS, 2020, 49 (08) : 4544 - 4549Liu Hao论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaXu Chenxiao论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaPan Xinhua论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaYe Zhizhen论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
- [42] Band alignment and electrical properties of NiO/?-Ga2O3 heterojunctions with different ?-Ga2O3 orientationsAPPLIED SURFACE SCIENCE, 2023, 622Deng, Yuxin论文数: 0 引用数: 0 h-index: 0机构: Sun Yat sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China Sun Yat sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R ChinaYang, Ziqi论文数: 0 引用数: 0 h-index: 0机构: South China Univ Technol, Sch Microelect, Guangzhou 510641, Peoples R China Sun Yat sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R ChinaXu, Tongling论文数: 0 引用数: 0 h-index: 0机构: Sun Yat sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China Sun Yat sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R ChinaJiang, Huaxing论文数: 0 引用数: 0 h-index: 0机构: South China Univ Technol, Sch Microelect, Guangzhou 510641, Peoples R China Sun Yat sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China论文数: 引用数: h-index:机构:Liao, Chao论文数: 0 引用数: 0 h-index: 0机构: Sun Yat sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China Sun Yat sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R ChinaSu, Danni论文数: 0 引用数: 0 h-index: 0机构: Sun Yat sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China Sun Yat sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R ChinaPei, Yanli论文数: 0 引用数: 0 h-index: 0机构: Sun Yat sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China Sun Yat sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R ChinaChen, Zimin论文数: 0 引用数: 0 h-index: 0机构: Sun Yat sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China Sun Yat sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R ChinaWang, Gang论文数: 0 引用数: 0 h-index: 0机构: Sun Yat sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China Sun Yat sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R ChinaLu, Xing论文数: 0 引用数: 0 h-index: 0机构: Sun Yat sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China Sun Yat sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China
- [43] Electrical and optical properties of hydrogen plasma treated β-Ga2O3 thin filmsJournal of Semiconductors, 2022, 43 (09) : 62 - 68Qian Jiang论文数: 0 引用数: 0 h-index: 0机构: Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences School of Information Science and Technology, North China University of Technology Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of SciencesJunhua Meng论文数: 0 引用数: 0 h-index: 0机构: Faculty of Science, Beijing University of Technology Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of SciencesYiming Shi论文数: 0 引用数: 0 h-index: 0机构: Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences Faculty of Science, Beijing University of Technology Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of SciencesZhigang Yin论文数: 0 引用数: 0 h-index: 0机构: Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of SciencesJingren Chen论文数: 0 引用数: 0 h-index: 0机构: Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of SciencesJing Zhang论文数: 0 引用数: 0 h-index: 0机构: School of Information Science and Technology, North China University of Technology Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of SciencesJinliang Wu论文数: 0 引用数: 0 h-index: 0机构: Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences论文数: 引用数: h-index:机构:
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- [50] Investigation of Enhanced Heteroepitaxy and Electrical Properties in κ-Ga2O3 Due to Interfacing with β-Ga2O3 Template LayersPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2023, 220 (08):Lee, Junhee论文数: 0 引用数: 0 h-index: 0机构: Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USAGautam, Lakshay论文数: 0 引用数: 0 h-index: 0机构: Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USATeherani, Ferechteh H.论文数: 0 引用数: 0 h-index: 0机构: Nanovation, 8 Route Chevreuse, F-78117 Chateaufort, France Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USASandana, Eric V.论文数: 0 引用数: 0 h-index: 0机构: Nanovation, 8 Route Chevreuse, F-78117 Chateaufort, France Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USABove, Philippe论文数: 0 引用数: 0 h-index: 0机构: Nanovation, 8 Route Chevreuse, F-78117 Chateaufort, France Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USARogers, David J.论文数: 0 引用数: 0 h-index: 0机构: Nanovation, 8 Route Chevreuse, F-78117 Chateaufort, France Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA论文数: 引用数: h-index:机构: