EDGE ABSORPTION OF GaPxAs1 - x SOLID SOLUTIONS.

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作者：
Sirota, N.N.
Bodnar', I.V.
Lukomskii, A.I.
Smirnova, G.F.
Finkel'shtein, L.M.
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Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1976年 / 10卷 / 06期
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摘要：
An investigation was made of the differential and normal edge absorption spectra of GaP//xAs//1// minus //x solid solutions. The dependence of the forbidden band width on the composition was determined. At 77 degree K the forbidden band width of Gap//xAs//1// minus //x with x equals 0. 49 was E//g**X ( GAMMA //8//v-X//l//c) equals E//g( GAMMA //8//v- GAMMA //l//c) equals 2. 100 eV. The LA phonon energy in solutions with the indirect band structure varied with the composition (from 30. 5 meV for GaP to 29. 0 meV for GaP//0//. //5//5As//0. //. //4//5).
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页码：671 / 673
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