共 50 条
- [1] SILICON AND SELENIUM DOPING EFFECTS ON BAND-GAP ENERGY AND SUBLATTICE ORDERING IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (08): : L1330 - L1333
- [2] P-type doping effects on band-gap energy for Ga0.5In0.5P grown by metalorganic vapor phase epitaxy [J]. Japanese Journal of Applied Physics, Part 2: Letters, 1988, 27 (08):
- [3] P-TYPE DOPING EFFECTS ON BAND-GAP ENERGY FOR GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08): : L1549 - L1552
- [6] Band-gap energy anomaly and sublattice ordering in GaInP and AlGaInP grown by metalorganic vapor phase epitaxy [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (11): : 2098 - 2106
- [7] LARGE (6-DEGREE) OFF-ANGLE EFFECTS ON SUBLATTICE ORDERING AND BAND-GAP ENERGY IN GA0.5IN0.5P GROWN ON (001) GAAS SUBSTRATES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (10): : L1728 - L1730
- [9] BAND-GAP ENERGY ANOMALY AND SUBLATTICE ORDERING IN GAINP AND ALGAINP GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (11): : 2098 - 2106
- [10] OPTICAL BAND-GAP IN ORDERED GA0.5IN0.5P [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 : 720 - 721