Dielectric and electrical characteristics of titanium-modified Ta2O5 thin films deposited on nitrided polysilicon by metalorganic chemical vapor deposition

被引:0
|
作者
Chang, Chich Shang [1 ]
Wu, Tai Bor [1 ]
Shih, Wong Cheng [2 ]
Chao, Lan Lin [2 ]
机构
[1] Dept. of Mat. Sci. and Engineering, National Tsing Hua University, 101, Sec. 2, Hsinchu 300, Taiwan
[2] Vanguard Intl. Semiconduct. Corp., Science-Based Industrial Park, 123, Park Ave-3rd, Hsinchu, 30077, Taiwan
来源
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 12 A期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:6812 / 6816
相关论文
共 50 条
  • [31] Enhanced deposition and dielectric property of Ta2O5 thin films on a rugged PtO electrode
    Liu, TP
    Huang, WP
    Wu, TB
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (05) : 1425 - 1427
  • [32] EFFECTS OF POSTDEPOSITION ANNEALING ON THE ELECTRICAL-PROPERTIES AND RELIABILITY OF ULTRATHIN CHEMICAL-VAPOR-DEPOSITED TA2O5 FILMS
    HAN, LK
    YOON, GW
    KWONG, DL
    MATHEWS, VK
    FAZAN, PC
    IEEE ELECTRON DEVICE LETTERS, 1994, 15 (08) : 280 - 282
  • [33] Growth of epitaxial SrBi2Ta2O9 thin films by metalorganic chemical vapor deposition
    Ishikawa, K
    Saiki, A
    Funakubo, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (4B): : 2102 - 2109
  • [34] Reduction of leakage current in chemical-vapor-deposited Ta2O5 thin films by furnace N2O annealing
    Sun, SC
    Chen, TF
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (06) : 1027 - 1029
  • [35] Growth of epitaxial SrBi2Ta2O9 thin films by metalorganic chemical vapor deposition
    Ishikawa, Katsuyuki
    Saiki, Atsushi
    Funakubo, Hiroshi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (5 B): : 2102 - 2109
  • [36] Electrical and microstructural properties of SrTiO3 thin films deposited by metalorganic chemical vapor deposition
    Cho, HJ
    Lee, JM
    Shin, JC
    Kim, HJ
    INTEGRATED FERROELECTRICS, 1997, 14 (1-4) : 115 - 122
  • [37] Processing and characterisation of sol-gel deposited Ta2O5 and TiO2-Ta2O5 dielectric thin films
    Cappellani, A
    Keddie, JL
    Barradas, NP
    Jackson, SM
    SOLID-STATE ELECTRONICS, 1999, 43 (06) : 1095 - 1099
  • [38] Electrical properties of Ta2O5 films obtained by plasma enhanced chemical vapor deposition using a TaF5 source
    Devine, RAB
    Vallier, L
    Autran, JL
    Paillet, P
    Leray, JL
    APPLIED PHYSICS LETTERS, 1996, 68 (13) : 1775 - 1777
  • [39] Ta2O5 thin films with exceptionally high dielectric constant
    Lin, J
    Masaaki, N
    Tsukune, A
    Yamada, M
    APPLIED PHYSICS LETTERS, 1999, 74 (16) : 2370 - 2372
  • [40] Optical properties of Ta2O5 thin films deposited by plasma ion-assisted deposition
    Woo, SH
    Hwangbo, CK
    Son, YB
    Moon, IC
    Kang, GM
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 46 : S187 - S191