Improving the Process of Production of Single Crystals by the Czochralski Method.

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作者：
Stopkevich, V.V.
Vologuev, E.V.
Veselin, Yu.N.
Degtyarik, N.V.
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Tsvetnye Metally | 1977年 / 03期
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摘要：
The effect of the parameters of the process of pulling silicon single crystals on the distribution of dopants and the distribution of the resistivity over the volume of the ingot is considered. The required level of automation of the crystal pulling apparatus and the accuracy requirements that must be met by systems which automatically control the main parameters of the pulling process are indicated.
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页码：53 / 54
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