Influence of the barrier thickness on the noise performance of AlAs/GaAs/AlAs double barrier resonant tunneling diodes

被引:0
|
作者
机构
来源
J Appl Phys | / 11卷 / 6026期
关键词
Compendex;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Tunneling magnetoresistance of MnAs thin film/GaAs/AlAs/GaAs:MnAs nanoclusters and its AlAs barrier thickness dependence
    Hai, Pham Nam
    Yokoyama, Masafumi
    Ohya, Shinobu
    Tanaka, Masaaki
    APPLIED PHYSICS LETTERS, 2006, 89 (24)
  • [32] RESONANT TUNNELING THROUGH A DOUBLE GAAS/ALAS SUPERLATTICE BARRIER, SINGLE QUANTUM-WELL HETEROSTRUCTURE
    REED, MA
    LEE, JW
    TSAI, HL
    APPLIED PHYSICS LETTERS, 1986, 49 (03) : 158 - 160
  • [33] FINE-STRUCTURE OF RESONANT-TUNNELING PEAK IN GAAS/ALAS DOUBLE-BARRIER HETEROSTRUCTURE
    VITUSEVICH, SA
    FIGIELSKI, T
    MAKOSA, A
    WOSINSKI, T
    BELYAEV, AE
    KONAKOVA, RV
    KRAVCHENKO, LN
    ACTA PHYSICA POLONICA A, 1995, 87 (02) : 377 - 380
  • [34] Modulation characteristics of AlAs/GaAs double barrier quantum well resonant tunneling structure at microwave frequencies
    Chu, HY
    Park, PW
    Lee, EH
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 35 (1-3): : 446 - 448
  • [35] Resonant Γ-Χ-Γ tunneling in GaAs/AlAs/GaAs single barrier heterostructures at zero and elevated magnetic field
    Finley, JJ
    Skolnick, MS
    Cockburn, JW
    Teissier, R
    Grey, R
    Hill, G
    Pate, MA
    SUPERLATTICES AND MICROSTRUCTURES, 1998, 23 (02) : 513 - 519
  • [36] RESONANT TUNNELING DIODES WITH ALAS BARRIER - GUIDES FOR IMPROVING ROOM-TEMPERATURE OPERATION
    VAKHSHOORI, D
    WANG, S
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3474 - 3476
  • [37] INTERVALLEY SCATTERING IN GAAS/ALAS RESONANT-TUNNELING DIODES
    SOTIRELIS, P
    ROBLIN, P
    PHYSICAL REVIEW B, 1995, 51 (19): : 13381 - 13388
  • [38] Temperature dependence of resonant tunneling characteristics in a p-type GaAs/AlAs double-barrier structure
    Ono, M
    Nishioka, N
    Morifuji, M
    Hamaguchi, C
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 835 - 836
  • [39] CONVERSION GAIN AT ROOM-TEMPERATURE IN A GAAS/ALAS DOUBLE-BARRIER RESONANT TUNNELING DIODE MIXER
    HIGGS, AW
    SMITH, GW
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (112): : 495 - 495
  • [40] Analysis of resonant tunneling in a GaAs/AlAs double-barrier structure under very high hydrostatic pressures
    Kim, YM
    Kim, NY
    Im, H
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 : S626 - S629